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| Data Sheet No. 2N4957UB Type 2N4957UB Geometry 0006 Polarity PNP Qual Level: JAN - JANTXV Features: * * * * Small signal RF silicon transistor designed for high-gain, low-noise applications. Housed in a cersot case. Also available in chip form using the 0006 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/426 which Semicoa meets in all cases. Generic Part Number: 2N4957UB REF: MIL-PRF-19500/426 Cersot Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 30 30 3.0 30 -65 to +200 -65 to +200 Unit V V V A o C C o Data Sheet No. 2N4957UB Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 100 A, IE = 0 Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 Emitter-Base Breakdown Voltage IE = 100 A, IC = 0 Collector-Base Cutoff Current o VCB = 20 V, IE 0, TC = +25 C Collector-Base Cutoff Current VCB = 20 V, IE 0, TC = +150oC Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO1 ICBO2 Min 30 30 3.0 ----- Max ------100 100 Unit V V V na A ON Characteristics DC Current Gain IC = 0.5 mA, VCE = 10 V IC = 2.0 mA, VCE = 10 V IC = 5.0 mA, VCE = 10 V o IC = 5.0 mA, VCE = 10 V, TA = -55 C Symbol hFE1 hFE2 hFE3 hFE4 Min 15 20 30 10 Max ----165 --- Unit --------- Small Signal Characteristics Magnitude of Common Emitter Small Signal Short Circuit Forward Current Transfer Ratio VCE = 10 V, IE = 2.0 mA, f = 100 MHz Collector to Base Feedback Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Collector to Base Time Constant VCB = 10 V, IE = 2.0 mA, f = 63.6 MHz Common Emitter Small Signal Power Gain VCE = 10 V, IC = 2.0 mA, f = 450 MHz Symbol |hfe| Ccb rb'CC GPE Min 12 --1.0 17 Max 36 0.8 8.0 25 Unit --pF ps dB |
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